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IMS Research Analyst Blog
SiC and GaN electronics: Where, when and how big?
Date: 15 August 2012
I spent last winter researching the emerging market for power semiconductor materials, silicon carbide (SiC) and gallium nitride (GaN). It became apparent that technology research and development is meaningless unless there are practical applications that demand the benefits which manufacturers of these deivices claim to deliver. Therefore, a large part of my work involved assessing the demand, adoption rates and timings from key industry sectors. The results were published the IMS Research report “The World Market for Silicon Carbide & Gallium Nitride Power Semiconductors - 2012 Edition”.
Silicon’s vice-like grip of the power electronics market in coming under increasing pressure from a pair of wide bandgap semiconductors. Switching from silicon electronics to wide bandgap alternatives promises to deliver improvements in the performance of power supplies, wind turbines, solar systems, hybrid electric vehicles, trams, trains and industrial machinery. Following publication of the report, I was invited to share some of the insights into these applications in an article for Compound Semiconductor magazine. It takes a detailed look at these opportunities for wide bandgap devices and identifies the barriers to their mass adoption.
Written by Richard Eden, Senior Analyst for Power Management & Conversion at IMS Research
Recent Power Management & Conversion Postings
- 15th August 2012 - SiC and GaN electronics: Where, when and how big?
- 26th January 2012 - Improved Power Conversion Efficiency Drives SiC & GaN Power Semiconductor Market Growth
- 29th June 2011 - Portable Computing Holds Opportunities for Power ICs
- 11th May 2011 - Tablets fire up the 10-20W Charger market
- 10th May 2011 - Silicon Carbide power semiconductors are truly open for business